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| IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 5 Clamped inductive load Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C C g g TO-247 AD (IXSH) (TAB) G C E TO-268 ( IXST) G E (TAB) C = Collector TAB = Collector TJ = 125C, VCE = 720 V; VGE = 15 V, RG = 22 TC = 25C G = Gate E = Emitter Features l Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity 6 4 Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 3 TJ = 25C TJ = 125C 6 50 2.5 100 TJ = 25C TJ = 125C 3.6 2.9 V V A mA nA V V * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * DC choppers BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1.0 mA, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 VCES Note 1 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Note 2 (c) 2002 IXYS All rights reserved 98669B (01/02) IXSH 35N120B IXST 35N120B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3600 VCE = 25 V, VGE = 0 V, f = 1 MHz 260 75 120 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 33 49 Inductive load, TJ = 25C IC = IC90, VGE = 15 V RG = 5 VCE = 0.8 VCES Note 3 Inductive load, TJ = 125C IC = IC90, VGE = 15 V RG = 5 , VCE = 0.8 VCES Note 3 36 27 160 180 5 38 29 2.5 240 340 9 300 300 S pF pF pF nC nC nC ns ns ns ns 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline (IXSH) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Note 2 9 mJ ns ns mJ ns ns mJ 0.42 K/W TO-268 Outline (IXST) (TO-247) 0.25 K/W Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 % Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. 2. 3. Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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